? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c23a i dm t c = 25 c, pulse width limited by t jm 92 a i ar t c = 25 c23a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. f c mounting force to-268 20...120/4.5...27 n/lb weight to-247 6 g to-268 4 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z international standard packages z epoxy meets ul 94 v-0 flammability classification z low r ds (on) low q g z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 3 ma 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.42 ? pulse test, t 300 s, duty cycle d 2 % g = gate s = source tab = drain ds99060a(02/04) to-247 ad (ixfh) (tab) to-268 (d3) ( ixft) g s IXFH23N80Q ixft23n80q v dss = 800 v i d25 = 23 a r ds(on) = 0.42 ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 18 26 s c iss 4900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 500 pf c rss 130 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 27 ns t d(off) r g = 1.5 ? (external), 74 n s t f 14 ns q g(on) 130 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 nc q gd 55 nc r thjc 0.25 k/w r thck to-247 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 23 a i sm repetitive; pulse width limited by t jm 92 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 9 a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline to-268 (ixft) outline i f = i s -di/dt = 100 a/ s, v r = 100 v IXFH23N80Q ixft23n80q
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 6v 5.5v 5v 4.5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10121416182022 v d s - volts i d - amperes v gs = 10v 6v 5v 4.5v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 4.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 23a i d = 11.5a v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 5 10 15 20 25 30 35 40 45 50 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v g s - volts v ds = 400v i d = 11.5a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc
? 2004 ixys all rights reserved fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pu ls e w id th - m illis e c o n d s r ( t h ) j c - oc / w
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